US Patent Issued to Mitsubishi Electric on June 23 for "High-frequency semiconductor package" (Japanese Inventors)

ALEXANDRIA, Va., July 15 -- United States Patent no. 12,666,971, issued on June 23, was assigned to Mitsubishi Electric Corp. (Tokyo).

"High-frequency semiconductor package" was invented by Tetsunari Saito (Tokyo), Seiichi Tsuji (Tokyo), Hiroaki Minamide (Tokyo), Ko Kanaya (Tokyo) and Shunichi Abe (Tokyo).

According to the abstract* released by the U.S. Patent & Trademark Office: "An input feedthrough (8) and an output feedthrough (9) provided on the substrate (3) are wire-connected to an input pad (5) and an output pad (6) of the semiconductor chip (4) respectively. A metal seal ring (12) is provided on the substrate (3) is electrically connected to the metal plate (1) by a through-hole (15). A conductive cap (14) is bonded to the metal ...