ALEXANDRIA, Va., June 16 -- United States Patent no. 12,660,642, issued on June 16, was assigned to Mitsubishi Electric Corp. (Tokyo).
"Semiconductor device" was invented by Hiroyuki Masumoto (Tokyo).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes an insulating layer having a first surface and a second surface opposite to the first surface. The semiconductor device includes at least one semiconductor element located on a side of the first surface. The semiconductor device includes a first metal sinter and a second metal sinter. The first metal sinter is in contact with the first surface of the insulating layer and the semiconductor element, and bonds the insulating layer and the...