ALEXANDRIA, Va., July 28 -- United States Patent no. 12,696,752, issued on July 28, was assigned to Mitsubishi Electric Corp. (Tokyo).

"Semiconductor device and method for manufacturing the same" was invented by Koichiro Nishizawa (Tokyo).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure relates to a semiconductor device and a method for manufacturing the same, and an object thereof is to provide a semiconductor and a method for manufacturing the same, the semiconductor device not diffusing a material of a metal layer to a semiconductor substrate. A semiconductor device of the present disclosure includes a semiconductor substrate which is formed of GaAs, a first barrier layer which is form...