ALEXANDRIA, Va., July 16 -- United States Patent no. 12,362,332, issued on July 15, was assigned to Mitsubishi Electric Corp. (Tokyo).
"Semiconductor device" was invented by Ryoya Shirahama (Tokyo), Arata Iizuka (Tokyo) and Korehide Okamoto (Fukuoka, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "An object of the present invention is to provide a technique capable of reducing a gap between a first semiconductor device and a second semiconductor device that are bonded. At least one of a pair of a first electrode of the first semiconductor device and a second electrode of the second semiconductor device and a pair of a second electrode of the first semiconductor device and a first electrode of the second...