US Patent Issued to Mitsubishi Electric on Jan. 27 for "Semiconductor device" (Japanese Inventors)

ALEXANDRIA, Va., Jan. 28 -- United States Patent no. 12,538,508, issued on Jan. 27, was assigned to Mitsubishi Electric Corp. (Tokyo).

"Semiconductor device" was invented by Koichi Nishi (Tokyo), Kosuke Sakaguchi (Tokyo) and Kazuya Konishi (Tokyo).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device according to the present disclosure includes: a semiconductor substrate including at least: an n-type first semiconductor layer; an n-type second semiconductor layer on the first semiconductor layer; a p-type third semiconductor layer on the second semiconductor layer; and an n-type fourth semiconductor layer on an upper layer part of the third semiconductor layer; a plurality of first trench gate...