US Patent Issued to Mitsubishi Electric on Jan. 27 for "Avalanche photo diode comprising a window layer and a p-type region formed by doping an impurity in the window layer" (Japanese Inventor)

ALEXANDRIA, Va., Jan. 28 -- United States Patent no. 12,538,590, issued on Jan. 27, was assigned to Mitsubishi Electric Corp. (Tokyo).

"Avalanche photo diode comprising a window layer and a p-type region formed by doping an impurity in the window layer" was invented by Harunaka Yamaguchi (Tokyo).

According to the abstract* released by the U.S. Patent & Trademark Office: "A buffer layer (2), a multiplication layer (3), a light-absorbing layer (5), a window layer (6,7), and a contact layer (8) are sequentially stacked on a semiconductor substrate (1). The window layer (6,7) is doped with an impurity to form a p-type region (9). A bandgap of the window layer (6,7) is greater than a bandgap of the light-absorbing layer (5). The window layer (...