US Patent Issued to Mitsubishi Electric on Feb. 17 for "Semiconductor device and semiconductor module comprising a polyimide film disposed in an active region and a termination region and a passivation film disposed as a film underlying the polyimide film" (Japanese Inventors)

ALEXANDRIA, Va., Feb. 17 -- United States Patent no. 12,557,691, issued on Feb. 17, was assigned to Mitsubishi Electric Corp. (Tokyo).

"Semiconductor device and semiconductor module comprising a polyimide film disposed in an active region and a termination region and a passivation film disposed as a film underlying the polyimide film" was invented by Kazuhiro Nishimura (Fukuoka, Japan), Makoto Ueno (Fukuoka, Japan), Shintaro Araki (Tokyo), Atsunobu Kawamoto (Tokyo) and Masanori Tomioka (Tokyo).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present invention relates to a semiconductor device including: a semiconductor substrate having: an active region through which a main current flows; and a termination ...