ALEXANDRIA, Va., Feb. 17 -- United States Patent no. 12,557,348, issued on Feb. 17, was assigned to MITSUBISHI ELECTRIC Corp. (Tokyo).
"Semiconductor device" was invented by Hisashi Saito (Tokyo), Yuki Takiguchi (Tokyo), Shigeyoshi Usami (Tokyo), Takahiro Yamada (Tokyo), Marika Nakamura (Tokyo) and Eiji Yagyu (Tokyo).
According to the abstract* released by the U.S. Patent & Trademark Office: "A source layer is provided on a first p-type layer made of a nitride-based semiconductor, and includes a semiconductor region including electrons as carriers. A drain layer faces the source layer in a first direction on the first p-type layer with a gap being provided therebetween, and includes a semiconductor region including electrons as carriers. ...