US Patent Issued to Mitsubishi Electric on Feb. 10 for "Method for manufacturing semiconductor laser device, and semiconductor laser device" (Japanese Inventors)

ALEXANDRIA, Va., Feb. 11 -- United States Patent no. 12,548,981, issued on Feb. 10, was assigned to Mitsubishi Electric Corp. (Tokyo).

"Method for manufacturing semiconductor laser device, and semiconductor laser device" was invented by Ayumi Fuchida (Tokyo), Tadashi Takase (Tokyo), Naoki Nakamura (Tokyo) and Ryoko Suzuki (Tokyo).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present application is provided with: a ridge laminated with a first conductivity type cladding layer, an active layer, and a second conductivity type first cladding layer in order and having a top portion formed to be flat; a first buried layer buried on both side areas of the ridge; a second buried layer covering the first buried l...