ALEXANDRIA, Va., Dec. 31 -- United States Patent no. 12,512,647, issued on Dec. 30, was assigned to Mitsubishi Electric Corp. (Tokyo).
"Semiconductor device" was invented by Hiroyuki Kawahara (Tokyo).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device according to the present application includes a semiconductor substrate, an n-type first cladding layer provided on the semiconductor substrate, an n-type second cladding layer provided on the first cladding layer, an active layer provided on the second cladding layer, a p-type third cladding layer provided on the active layer, a surface electrode provided above the third cladding layer, a back surface electrode provided below the semiconductor...