ALEXANDRIA, Va., Dec. 23 -- United States Patent no. 12,506,052, issued on Dec. 23, was assigned to Mitsubishi Electric Corp. (Tokyo).
"Semiconductor device and power conversion device" was invented by Yo Tanaka (Tokyo), Masakazu Tani (Tokyo), Tomohisa Yamane (Tokyo) and Katsuhisa Kodama (Tokyo).
According to the abstract* released by the U.S. Patent & Trademark Office: "In this power semiconductor module, a first lead frame and a second lead frame through which currents flow in opposite directions are arranged so as to overlap each other, whereby the internal inductance can be reduced. In a direction perpendicular to one main surface of a first metal wiring layer, each of the first lead frame and the second lead frame is provided so as n...