ALEXANDRIA, Va., Dec. 23 -- United States Patent no. 12,507,427, issued on Dec. 23, was assigned to Mitsubishi Electric Corp. (Tokyo).
"Semiconductor device" was invented by Shinya Soneda (Tokyo), Kenji Harada (Tokyo) and Kakeru Otsuka (Tokyo).
According to the abstract* released by the U.S. Patent & Trademark Office: "In plan view of an RC-IGBT, a boundary region has an occupancy rate of an n+-type source layer per unit area, the occupancy rate being smaller than an occupancy rate of the n+-type source layer per unit area in an IGBT region, and the boundary region has an occupancy rate of a p+-type contact layer per unit area, the occupancy rate being smaller than an occupancy rate of the p+-type contact layer per unit area in an IGBT re...