US Patent Issued to Mitsubishi Electric on Dec. 2 for "Semiconductor device and method for manufacturing semiconductor device" (Japanese Inventor)

ALEXANDRIA, Va., Dec. 2 -- United States Patent no. 12,489,274, issued on Dec. 2, was assigned to Mitsubishi Electric Corp. (Tokyo).

"Semiconductor device and method for manufacturing semiconductor device" was invented by Kazuyuki Onoe (Tokyo).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device according to the present disclosure includes a main part that includes a semiconductor substrate, a first cladding layer provided on the semiconductor substrate, an active layer provided on the first cladding layer, and a second cladding layer provided on the active layer, and in which a flat part and a mesa part are formed, the mesa part including the active layer and a first embedded layer covering ...