US Patent Issued to Mitsubishi Electric on Dec. 16 for "Silicon carbide semiconductor device and method for manufacturing silicon carbide semiconductor device" (Japanese Inventor)

ALEXANDRIA, Va., Dec. 16 -- United States Patent no. 12,501,650, issued on Dec. 16, was assigned to Mitsubishi Electric Corp. (Tokyo).

"Silicon carbide semiconductor device and method for manufacturing silicon carbide semiconductor device" was invented by Koji Okuno (Tokyo).

According to the abstract* released by the U.S. Patent & Trademark Office: "A MOSFET includes a gate electrode and an etching stopper layer formed on a field insulating film of a gate pad region, and an interlayer insulating film formed on the gate electrode and the etching stopper layer. The etching stopper layer is made from a substance having a selectivity of 5.0 or more with respect to etching of the interlayer insulating film and the field insulating film, and is...