ALEXANDRIA, Va., April 21 -- United States Patent no. 12,610,573, issued on April 21, was assigned to Mitsubishi Electric Corp. (Tokyo).

"Semiconductor device and method for manufacturing semiconductor device" was invented by Koichi Nishi (Tokyo), Sho Tanaka (Tokyo), Shinya Soneda (Tokyo) and Kazuya Konishi (Tokyo).

According to the abstract* released by the U.S. Patent & Trademark Office: "In a mesa region sandwiched between adjacent active trenches among mesa regions that are regions each sandwiched between adjacent trenches, a third semiconductor layer has regions discretely arranged in a first direction so as to be in contact with one active trench of the adjacent active trenches and not in contact with the other active trench, and re...