US Patent Issued to MITSUBISHI CHEMICAL, THE JAPAN STEEL WORKS on July 28 for "Gallium nitride crystal, gallium nitride substrate, and method for producing gallium nitride crystal" (Japanese Inventors)

ALEXANDRIA, Va., July 28 -- United States Patent no. 12,692,624, issued on July 28, was assigned to MITSUBISHI CHEMICAL Corp. (Tokyo) and THE JAPAN STEEL WORKS LTD. (Tokyo).

"Gallium nitride crystal, gallium nitride substrate, and method for producing gallium nitride crystal" was invented by Yutaka Mikawa (Miyagi, Japan), Kouhei Kurimoto (Hokkaido, Japan) and Quanxi Bao (Hokkaido, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A gallium nitride crystal contains F. A total content of halogen elements other than F in the gallium nitride crystal is 1/100 or less of a content of F. The gallium nitride crystal includes a main surface 1 having an inclination of 0 to 10 degrees from a (000-1) crystal plane. T...