US Patent Issued to MINEBEA POWER SEMICONDUCTOR DEVICE on Sept. 8 for "Semiconductor device and power conversion device" (Japanese Inventors)

ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,733,235, issued on Sept. 8, was assigned to MINEBEA POWER SEMICONDUCTOR DEVICE INC. (Ibaraki, Japan).

"Semiconductor device and power conversion device" was invented by Masaki Shiraishi (Hitachi, Japan), Daisuke Kawase (Hitachi, Japan), Tetsuo Oda (Hitachi, Japan), Tomoyasu Furukawa (Tokyo), Yutaka Kato (Hitachi, Japan) and Tsubasa Moritsuka (Hitachi, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present invention provides: a semiconductor device which has higher resistance to bias at high temperatures and high humidities than ever before, while achieving good connection between a field limiting layer and a field plate; and a power conversion...