ALEXANDRIA, Va., July 16 -- United States Patent no. 12,672,569, issued on June 30, was assigned to MINEBEA POWER SEMICONDUCTOR DEVICE INC. (Ibaraki, Japan).

"Power semiconductor module and power conversion device" was invented by Toru Masuda (Tokyo), Seiichi Hayakawa (Hitachi, Japan) and Yuji Takayanagi (Hitachi, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "The provided power semiconductor module is configured to reduce the wiring inductance and save space on the substrate by establishing a multi-parallel connection between multiple power semiconductor chips. It consists of a first and second insulated substrates with a plurality of semiconductor switching elements positioned on one and facing the o...