US Patent Issued to MIKRO MESA TECHNOLOGY on Sept. 1 for "Micro light-emitting diode device" (Taiwanese Inventors)

ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,302, issued on Sept. 1, was assigned to MIKRO MESA TECHNOLOGY Co. LTD. (Apia, Samoa).

"Micro light-emitting diode device" was invented by Li-Yi Chen (Tainan City, Taiwan) and Hsin-Wei Lee (Tainan City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A micro light-emitting diode device includes a substrate, a micro light-emitting diode, and a transparent top electrode. The micro light-emitting diode is disposed on the substrate and includes a p-type GaN layer, an n-type III-nitride layer above the p-type GaN layer, an n-doped AlN layer above and in contact with the n-type III-nitride layer, and an active layer between the p-type GaN layer and t...