ALEXANDRIA, Va., Sept. 30 -- United States Patent no. 12,749,517, issued on Sept. 29, was assigned to Microsft Technology Licensing LLC (Redmond, Wash.).
"Flexible SRAM pre-charge systems and methods for minimizing leakage and reducing power consumption" was invented by Kevin Neal Magill (Durham, N.C.), Chiaming Chai (Cary, N.C.) and Jay Paresh Jadav (Morrisville, N.C.).
According to the abstract* released by the U.S. Patent & Trademark Office: "Embodiments of the present disclosure include techniques for pre-charging an SRAM. A pre-charge signal may be used to apply a pre-charge voltage to bit lines in an SRAM memory bank. Features and advantages of the present disclosure include receiving a pre-charge signal in an SRAM and storing the p...