US Patent Issued to Micron Technology on Sept. 22 for "Memory devices including tri-state memory cells" (Idaho Inventors)

ALEXANDRIA, Va., Sept. 24 -- United States Patent no. 12,744,082, issued on Sept. 22, was assigned to Micron Technology Inc. (Boise, Idaho).

"Memory devices including tri-state memory cells" was invented by Jiyun Li (Boise, Idaho) and Yuan He (Boise, Idaho).

According to the abstract* released by the U.S. Patent & Trademark Office: "Memory devices including tri-state memory cells are disclosed. A memory device may include a first tri-state cell that may store a first voltage level that is one of three voltage levels, a second tri-state cell that may store a second voltage level that is one of the three voltage levels, and three input/output lines that may access the memory device. The three input/output lines may carry three respective bi...