US Patent Issued to Micron Technology on Sept. 22 for "Memory device structure and forming method including reticle adjustment" (Idaho Inventor)

ALEXANDRIA, Va., Sept. 24 -- United States Patent no. 12,745,606, issued on Sept. 22, was assigned to Micron Technology Inc. (Boise, Idaho).

"Memory device structure and forming method including reticle adjustment" was invented by Yi Hu (Meridian, Idaho).

According to the abstract* released by the U.S. Patent & Trademark Office: "Some embodiments include apparatuses and methods of forming the apparatuses. One of the apparatuses includes memory cell strings having respective pillars extending through levels of first conductive materials interleaved with levels of first dielectric materials; conductive structures formed over the memory cell strings and extending through levels of second conductive materials interleaved with levels of second...