ALEXANDRIA, Va., Sept. 3 -- United States Patent no. 12,408,318, issued on Sept. 2, was assigned to Micron Technology Inc. (Boise, Idaho).
"Semiconductor formation using hybrid oxidation" was invented by Somik Mukherjee (Boise, Idaho), Shen Hu (Boise, Idaho), Anish A. Khandekar (Boise, Idaho), Sau Ha Cheung (Boise, Idaho) and Zhiqiang Xie (Meridian, Idaho).
According to the abstract* released by the U.S. Patent & Trademark Office: "Methods, apparatuses, and systems related to forming a semiconductor using hybrid oxidation are described. An example method includes forming an opening to create an isolation region in a semiconductor substrate. The example method further includes depositing a first dielectric into the isolation region at a fi...