US Patent Issued to Micron Technology on Sept. 15 for "Adjusting refresh rate during self-refresh state" (Texas Inventors)

ALEXANDRIA, Va., Sept. 15 -- United States Patent no. 12,738,309, issued on Sept. 15, was assigned to Micron Technology Inc. (Boise, Idaho).

"Adjusting refresh rate during self-refresh state" was invented by John E. Riley (McKinney, Texas), Joo-Sang Lee (Frisco, Texas) and Scott E. Smith (Plano, Texas).

According to the abstract* released by the U.S. Patent & Trademark Office: "Methods, systems, and devices for adjusting a refresh rate during a self-refresh state are described. A memory system may enter a self-refresh state and execute a first set of refresh operations on a set of rows of memory cells at the memory system according to a first rate. The memory system may determine, based on executing the first set of refresh operations, th...