US Patent Issued to Micron Technology on Sept. 1 for "Input voltage degradation detection" (California, Idaho Inventors)

ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,724,560, issued on Sept. 1, was assigned to Micron Technology Inc. (Boise, Idaho).

"Input voltage degradation detection" was invented by Joseph A. Oberle (Sunnyvale, Calif.), David C. Sastry (El Dorado Hills, Calif.), Anil Kumar Agarwal (Boise, Idaho) and Sumit Tayal (Brentwood, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method includes performing a host-initiated test memory operation of a memory device in a memory sub-system and detecting, via a sensor circuit, an input voltage or input current of the memory device or the memory sub-system. The method further includes determining whether the input voltage or the input current meets a degr...