US Patent Issued to Micron Technology on Oct. 6 for "Using non-segregated cells as drain-side select gates for sub-blocks in a memory device" (California Inventor)

ALEXANDRIA, Va., Oct. 6 -- United States Patent no. 12,755,792, issued on Oct. 6, was assigned to Micron Technology Inc. (Boise, Idaho).

"Using non-segregated cells as drain-side select gates for sub-blocks in a memory device" was invented by Aaron S. Yip (Los Gatos, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Control logic in a memory device receives a request to program data to a block of a memory array of the memory device, the block comprising a plurality of sub-blocks, and identifies a first sub-block of the plurality of sub-blocks to be programmed with at least a portion of the data. The control logic further causes a plurality of control signals to be applied to a plurality of logical select...