US Patent Issued to Micron Technology on Oct. 27 for "Light hibernation mode for memory" (Chinese Inventor)

ALEXANDRIA, Va., Oct. 27 -- United States Patent no. 12,775,403, issued on Oct. 27, was assigned to Micron Technology Inc. (Boise, Idaho).

"Light hibernation mode for memory" was invented by Liang Ge (Shanghai).

According to the abstract* released by the U.S. Patent & Trademark Office: "Methods, systems, and devices for a light hibernation mode for memory are described. A memory system may include volatile memory and non-volatile memory and may be configured to operate according to a first mode of operation (e.g., associated with relatively high power consumption), a light hibernation mode (e.g., a second mode associated with decreased power consumption in comparison to the first mode), and a full hibernation mode (e.g., a third mode of o...