US Patent Issued to Micron Technology on Oct. 20 for "Block stripe building for a memory device" (California, Texas Inventors)

ALEXANDRIA, Va., Oct. 21 -- United States Patent no. 12,769,458, issued on Oct. 20, was assigned to Micron Technology Inc. (Boise, Idaho).

"Block stripe building for a memory device" was invented by Wei Wang (Dublin, Calif.), Yang Liu (Melissa, Texas) and Wenyen Chang (San Jose, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Methods, systems, and devices for block stripe building for a memory device are described. Selection of a skew offset value for configuration of block stripes at a memory device may be based on a relative distribution of bad blocks across memory devices within block stripes. For selecting the skew offset value, a manufacturing system may loop through a set of candidate skew offset...