US Patent Issued to Micron Technology on Oct. 20 for "Apparatuses and methods including circuits in gap regions of a memory array" (Japanese Inventor)

ALEXANDRIA, Va., Oct. 21 -- United States Patent no. 12,770,660, issued on Oct. 20, was assigned to Micron Technology Inc. (Boise, Idaho).

"Apparatuses and methods including circuits in gap regions of a memory array" was invented by Hirokazu Ato (Sagamihara, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Apparatuses and methods including circuits in gap regions of a memory array are disclosed. An example apparatus includes first and second memory mats adjacent along a first direction, and further includes a region between the first and second memory mats along the first direction. The region includes a local input/output (LIO) line that extends along a second direction perpendicular to the first direct...