ALEXANDRIA, Va., May 5 -- United States Patent no. 12,620,445, issued on May 5, was assigned to Micron Technology Inc. (Boise, Idaho).
"Controlling erase-to-program delay for improving data retention" was invented by Zhongyuan Lu (Boise, Idaho).
According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device includes a memory array and control logic, operatively coupled to the memory array, to perform operations including identifying an erased block of the memory array, causing a set of cells addressable by a target wordline of the erased block to be set to a target threshold voltage, determining an amount of threshold voltage shift with respect to the target threshold voltage after a delay, determining whether...