US Patent Issued to Micron Technology on May 26 for "Read disturb detection in a memory system" (Idaho, California Inventors)

ALEXANDRIA, Va., May 26 -- United States Patent no. 12,640,211, issued on May 26, was assigned to Micron Technology Inc. (Bosie, Idaho).

"Read disturb detection in a memory system" was invented by Deping He (Boise, Idaho) and Chun Sum Yeung (San Jose, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Methods, systems, and devices for read disturb detection in a memory system are described. A memory system may perform a read operation on a set of memory cells using a read voltage that is between a first target threshold voltage for the set of memory cells and a second target threshold voltage for the set of memory cells. The memory system may determine, based on a quantity of memory cells with a threshold...