US Patent Issued to Micron Technology on May 26 for "Memory device with a storage component" (Idaho, Texas Inventors)

ALEXANDRIA, Va., May 26 -- United States Patent no. 12,640,225, issued on May 26, was assigned to Micron Technology Inc. (Boise, Idaho).

"Memory device with a storage component" was invented by Lingming Yang (Meridian, Idaho), Raghukiran Sreeramaneni (Frisco, Texas) and Nevil N. Gajera (Meridian, Idaho).

According to the abstract* released by the U.S. Patent & Trademark Office: "A stacked memory device (e.g., a high-bandwidth memory (HBM) device) having a storage component is disclosed. The stacked memory device can include a first logic die, one or more memory dies, a second logic die, and one or more storage dies. The first logic die is coupled with the one or more memory dies and the second logic die through TSVs. The second logic die ...