US Patent Issued to Micron Technology on May 26 for "Memory array with multiplexed digit lines" (Italian Inventors)

ALEXANDRIA, Va., May 26 -- United States Patent no. 12,640,191, issued on May 26, was assigned to Micron Technology Inc. (Bosie, Idaho).

"Memory array with multiplexed digit lines" was invented by Ferdinando Bedeschi (Biassono, Italy) and Stefan Frederik Schippers (Peschiera del Garda, Italy).

According to the abstract* released by the U.S. Patent & Trademark Office: "Methods, systems, and devices for a memory device with multiplexed digit lines are described. In some cases, a memory cell of the memory device may include a storage component and a selection component that includes two transistors. A first transistor may be coupled with a word line and a second transistor may be coupled with a select line to selectively couple the memory ce...