US Patent Issued to Micron Technology on May 26 for "Access line voltage ramp rate adjustment" (California, Idaho Inventors)

ALEXANDRIA, Va., May 26 -- United States Patent no. 12,640,214, issued on May 26, was assigned to Micron Technology Inc. (Boise, Idaho).

"Access line voltage ramp rate adjustment" was invented by Yu-Chung Lien (San Jose, Calif.), John Paul Aglubat (Meridian, Idaho) and Zhenming Zhou (San Jose, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Access line voltage ramp rate adjustment is described herein. An apparatus may include a memory device including a plurality of groups of memory cells and a processing device coupled to the memory device which may receive a program command to be executed on one of the plurality of groups of memory cells and determine if a program verify (PVFY) loop associated with t...