US Patent Issued to Micron Technology on May 19 for "Vertically stacked storage nodes and access devices with vertical access lines" (Idaho Inventors)

ALEXANDRIA, Va., May 19 -- United States Patent no. 12,635,124, issued on May 19, was assigned to Micron Technology Inc. (Boise, Idaho).

"Vertically stacked storage nodes and access devices with vertical access lines" was invented by Kamal M. Karda (Boise, Idaho), Si-Woo Lee (Boise, Idaho) and Haitao Liu (Boise, Idaho).

According to the abstract* released by the U.S. Patent & Trademark Office: "Systems, methods and apparatus are provided for an array of vertically stacked memory cells. The vertically stacked memory cells have horizontally oriented access devices having a first source/drain region, a channel region, and a second source drain and horizontally oriented storage nodes that are vertically separated from the access devices. Vert...