US Patent Issued to Micron Technology on May 19 for "Programming selective word lines during an erase operation in a memory device" (American, Italian, Japanese Inventors)

ALEXANDRIA, Va., May 19 -- United States Patent no. 12,632,180, issued on May 19, was assigned to Micron Technology Inc. (Boise, Idaho).

"Programming selective word lines during an erase operation in a memory device" was invented by Jeffrey S. McNeil (Nampa, Idaho), Jonathan S. Parry (Boise, Idaho), Ugo Russo (Boise, Idaho), Akira Goda (Tokyo), Kishore Kumar Muchherla (San Jose, Calif.), Violante Moschiano (Avezzano AQ, Italy), Niccolo' Righetti (Boise, Idaho) and Silvia Beltrami (Almenno San Bartolomeo, Italy).

According to the abstract* released by the U.S. Patent & Trademark Office: "Control logic in a memory device causes a first pulse to be applied to a plurality of word lines coupled to respective memory cells in a memory array. The...