US Patent Issued to Micron Technology on May 12 for "Memory device bad column identification and compensation" (California Inventors)

ALEXANDRIA, Va., May 12 -- United States Patent no. 12,625,764, issued on May 12, was assigned to Micron Technology Inc. (Boise, Idaho).

"Memory device bad column identification and compensation" was invented by Jun Wan (San Jose, Calif.), Ying Tai (Mountain View, Calif.), Wei Wang (Dublin, Calif.) and Zhenming Zhou (San Jose, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for managing error correction in a memory device includes identifying, by a memory controller, codewords in a memory array of the memory device that have bad columns. The method includes calculating, by the memory controller, an increased Error Correction Code (ECC) layer for each identified codeword based on a number of er...