US Patent Issued to Micron Technology on March 31 for "Multi-program of memory cells without intervening erase operations" (Idaho Inventor)

ALEXANDRIA, Va., March 31 -- United States Patent no. 12,592,283, issued on March 31, was assigned to Micron Technology Inc. (Boise, Idaho).

"Multi-program of memory cells without intervening erase operations" was invented by Ezra Edward Hartz (Meridian, Idaho).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device includes an array of memory cells configured as single-level cell memory and control logic operatively coupled with the array of memory cells. The control logic causes first data to be programmed to a plurality of memory cells of the array of memory cells, the first data including a first voltage distribution programmed relative to a first threshold voltage (Vt) level. The control logic cau...