US Patent Issued to Micron Technology on March 24 for "Multiple write programming for a segment of a memory device" (American, Japanese Inventors)

ALEXANDRIA, Va., March 24 -- United States Patent no. 12,585,583, issued on March 24, was assigned to Micron Technology Inc. (Boise, Idaho).

"Multiple write programming for a segment of a memory device" was invented by Huai-Yuan Tseng (San Ramon, Calif.), Xiangyu Tang (San Jose, Calif.), Eric N. Lee (San Jose, Calif.), Haibo Li (Cupertino, Calif.), Kishore Kumar Muchherla (San Jose, Calif.) and Akira Goda (Tokyo).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device can include a memory array including memory cells arranged in one or more pages. The memory array can be coupled to control logic to receive a first request to write first data to a page of the one or more pages and program the first data...