US Patent Issued to Micron Technology on March 17 for "Singulated semiconductor device including a layer modification offset from a corner thereof and methods for forming the same" (Singaporean Inventors)

ALEXANDRIA, Va., March 17 -- United States Patent no. 12,581,888, issued on March 17, was assigned to Micron Technology Inc. (Boise, Idaho).

"Singulated semiconductor device including a layer modification offset from a corner thereof and methods for forming the same" was invented by Marc Anthony Romana de Guzman (Singapore), Aibin Yu (Singapore) and Bee Sei Soh (Singapore).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device can include a semiconductor substrate singulated from a device wafer having had multiple semiconductor devices formed thereon. The semiconductor substrate can include a first corner, a first sidewall extends in a first direction from the first corner, and a second sidewal...