US Patent Issued to Micron Technology on March 17 for "Apparatuses and methods for forcing memory cell failures in a memory device" (American, Japanese Inventors)

ALEXANDRIA, Va., March 17 -- United States Patent no. 12,580,036, issued on March 17, was assigned to Micron Technology Inc. (Boise, Idaho).

"Apparatuses and methods for forcing memory cell failures in a memory device" was invented by Yoshinori Fujiwara (Boise, Idaho) and Kenji Yoshida (Chofu, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Apparatuses and methods for forcing memory cell failures in a memory device are disclosed. An example apparatus includes a column disable control circuit coupled to a plurality of column latch sets to receive match signals and associated column plane addresses, the column disable control circuit configured to provide redundant column select signals and column plane m...