US Patent Issued to Micron Technology on June 9 for "Microelectronic devices and memory devices including vertically spaced transistors and storage devices, and related electronic systems" (Idaho Inventors)

ALEXANDRIA, Va., June 9 -- United States Patent no. 12,651,628, issued on June 9, was assigned to Micron Technology Inc. (Boise, Idaho).

"Microelectronic devices and memory devices including vertically spaced transistors and storage devices, and related electronic systems" was invented by Fatma Arzum Simsek-Ege (Boise, Idaho) and Haitao Liu (Boise, Idaho).

According to the abstract* released by the U.S. Patent & Trademark Office: "A microelectronic device includes a first die and a second die vertically overlying and attached to the first die. The first die includes an array region and a peripheral region horizontally neighboring the array region. The array region includes memory cells respectively including a first transistor structure, ...