US Patent Issued to Micron Technology on June 30 for "Methods used in forming a memory array comprising strings of memory cells comprising forming undoped semiconductive material into a void-space" (Idaho Inventors)

ALEXANDRIA, Va., July 16 -- United States Patent no. 12,672,282, issued on June 30, was assigned to Micron Technology Inc. (Boise, Idaho).

"Methods used in forming a memory array comprising strings of memory cells comprising forming undoped semiconductive material into a void-space" was invented by John D. Hopkins (Meridian, Idaho) and Haoyu Li (Boise, Idaho).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory array comprising strings of memory cells comprises conductor tier comprising conductor material. Laterally-spaced memory blocks individually comprising a vertical stack comprises alternating insulative tiers and conductive tiers. Channel-material strings of memory cells extend through the insulative...