US Patent Issued to Micron Technology on June 30 for "Adaptive parity techniques for a memory device" (California Inventors)

ALEXANDRIA, Va., July 16 -- United States Patent no. 12,670,065, issued on June 30, was assigned to Micron Technology Inc. (Bosie, Idaho).

"Adaptive parity techniques for a memory device" was invented by Justin Eno (El Dorado Hills, Calif.), William A. Melton (Shingle Springs, Calif.) and Sean S. Eilert (Penryn, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Methods, systems, and devices for adaptive parity techniques for a memory device are described. An apparatus, such as a memory device, may use one or more error correction code (ECC) schemes, an error cache, or both to support access operations. The memory device may receive a command from a host device to read or write data. If the error cache in...