US Patent Issued to Micron Technology on June 2 for "Memory with fail indicators, including memory with led fail indicators, and associated systems, devices, and methods" (Idaho, Texas Inventors)

ALEXANDRIA, Va., June 2 -- United States Patent no. 12,645,520, issued on June 2, was assigned to Micron Technology Inc. (Boise, Idaho).

"Memory with fail indicators, including memory with led fail indicators, and associated systems, devices, and methods" was invented by Aaron Jannusch (Boise, Idaho), Mow Yiak Goh (Boise, Idaho) and Robin K. Mitra (Buda, Texas).

According to the abstract* released by the U.S. Patent & Trademark Office: "Memory with fail indicators, and associated systems, devices, and methods are disclosed herein. In one embodiment, a system includes a plurality of memory systems and a host device. At least one of the memory systems includes a fail indicator connected to the host device via a side channel of the system. T...