US Patent Issued to Micron Technology on June 2 for "Memory device including 2-transistor memory cell structure for neural network" (Idaho Inventors)

ALEXANDRIA, Va., June 2 -- United States Patent no. 12,646,536, issued on June 2, was assigned to Micron Technology Inc. (Boise, Idaho).

"Memory device including 2-transistor memory cell structure for neural network" was invented by Kamal M. Karda (Boise, Idaho), Karthik Sarpatwari (Boise, Idaho), Alessandro Calderoni (Boise, Idaho), Durai Vishak Nirmal Ramaswamy (Boise, Idaho) and Yunfei Gao (Boise, Idaho).

According to the abstract* released by the U.S. Patent & Trademark Office: "Some embodiments include apparatuses and methods of operating the apparatuses. One of the apparatuses includes a first memory cell and a second memory cell, each of the first and second memory cells including a first transistor including a first region and a f...