US Patent Issued to Micron Technology on June 16 for "Memory sub-system management based on dynamic control of wordline start voltage" (American, Chinese Inventors)

ALEXANDRIA, Va., June 16 -- United States Patent no. 12,658,227, issued on June 16, was assigned to Micron Technology Inc. (Boise, Idaho).

"Memory sub-system management based on dynamic control of wordline start voltage" was invented by Jiangang Wu (Milpitas, Calif.), Lei Zhou (Shanghai), Jung Sheng Hoei (Newark, Calif.), Kishore Kumar Muchherla (Fremont, Calif.) and Qisong Lin (El Dorado Hills, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A request to perform a write operation at a memory device is received. Current wordline start voltage (WLSV) information associated with a particular memory segment of the plurality of memory segments is retrieved. In a firmware record in a memory sub-system contr...