US Patent Issued to Micron Technology on July 8 for "Microelectronic devices with vertically recessed channel structures and discrete, spaced inter-slit structures, and related methods and systems" (Idaho Inventors)

ALEXANDRIA, Va., July 9 -- United States Patent no. 12,356,617, issued on July 8, was assigned to Micron Technology Inc. (Boise, Idaho).

"Microelectronic devices with vertically recessed channel structures and discrete, spaced inter-slit structures, and related methods and systems" was invented by Haitao Liu (Boise, Idaho), Litao Yang (Boise, Idaho), Albert Fayrushin (Boise, Idaho), Naveen Kaushik (Boise, Idaho), Jian Li (Boise, Idaho) and Collin Howder (Boise, Idaho).

According to the abstract* released by the U.S. Patent & Trademark Office: "A microelectronic device includes a stack structure comprising a vertically alternating sequence of insulative and conductive structures arranged in tiers. At least one pillar, comprising a channel ...