US Patent Issued to Micron Technology on July 7 for "Wordline leakage test management" (Singaporean, American Inventors)

ALEXANDRIA, Va., July 7 -- United States Patent no. 12,675,230, issued on July 7, was assigned to Micron Technology Inc. (Boise, Idaho).

"Wordline leakage test management" was invented by Wai Leong Chin (Singapore), Francis Chee Khai Chew (Singapore), Trismardawi Tanadi (Folsom, Calif.), Chun Sum Yeung (San Jose, Calif.), Lawrence Dumalag (Folsom, Calif.) and Ekamdeep Singh (San Jose, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory sub-system causing execution of a first wordline leakage test of a first wordline group of a set of wordline groups of a memory block in response to determining a temperature of the memory block is within a threshold temperature range. A first result of the first wo...