US Patent Issued to Micron Technology on July 7 for "Single crystal silicon cores for stacked memory cells" (Idaho Inventor)

ALEXANDRIA, Va., July 7 -- United States Patent no. 12,677,420, issued on July 7, was assigned to Micron Technology Inc. (Bosie, Idaho).

"Single crystal silicon cores for stacked memory cells" was invented by Yongjun Hu (Boise, Idaho).

According to the abstract* released by the U.S. Patent & Trademark Office: "Methods, systems, and devices for single crystal silicon cores for stacked memory cells are described. A memory device may be formed using silicon cores that are each associated with a set of multiple memory cells. Multiple silicon cores may extend along a first direction, and multiple sleeves of memory materials and conductive materials may be formed around each silicon core. Each sleeve of memory materials may be associated with a...